06n80c3 datasheet pdf storage

Description the tyntxn 0512 tyntxn 1012 family of silicon controlled rectifiers. The easytouse management interface makes complex administrative storage tasks simple, including setup in less than 15. C3d03060fsilicon carbide schottky diode v 600 v ec. Q g,typ 31 nc product summary type package marking spp06n80c3 pgto2203 06n80c3 pgto2203 rev. Storage temperature c case temperature c junction temperature c operating temperature c 1. Q g,typ 31 nc product summary type package marking spp06n80c3 pgto2203 06n80c3 pg. December 20 thermal characteristics fqp6n90c fqpf6n90c nchannel qfet mosfet 900 v, 6. Lenovo thinksystem ds6200 san array offers breakthrough performance and scale at bestinclass pricing, along with 99. I absolute maximum ratings tc25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 800 v gatesource voltage vgss 30 v continuous id 7.

Monolithic linear ic la78045 tv and crt display vertical support. B c3d03060fsilicon carbide schottky diode zrec rectifier fullpak features 600volt schottky rectifier. En7881a monolithic linear ic tv and crt display vertical output ic with bus control support. Description 2006 fairchild semiconductor corporation. Spp17n80c3 coolmos power transistor product summary features v 800 v ds new revolutionary high voltage technology r. Package marking and ordering information 2006 fairchild semiconductor corporation fqp6n90c fqpf6n90c rev. Operating and storage temperature t j, stg c mounting torque m3 and m3. Unit test conditions collector to base breakdown voltage vbrcbo 30 v ic1ma, i e0 collector to emitter breakdown voltage vbrceo 30 v ic10ma, i b0. Nc7sz00p5x on semiconductor datasheet and cad model. Vdgr 650 v gatesourcegnd voltage vgs 30 v drain current pulsed1 idm 48 adc continuous drain current tc 25c id 12 adc continuous drain current tc 100c id 8. The device is fabricated with advanced cmos technology to achieve ultrahigh speed with high output drive while maintaining low static power dissipation over a broad vcc operating range.

H5n3011p silicon n channel mos fet high speed power switching rej03g03850200 rev. Features high surge capability high onstate current high stability and reliability txn serie. C3198 datasheet pdf vceo50v, npn transistor elite, c3198 pdf, c3198 pinout, c3198 manual, c3198 schematic, c3198 equivalent, c3198 data. Nov 25, 2016 c3198 datasheet pdf vceo50v, npn transistor elite, c3198 pdf, c3198 pinout, c3198 manual, c3198 schematic, c3198 equivalent, c3198 data. Ipp60r299cp transistor datasheet pdf power transistor. Extremely high dvdt capability 100% avalanche tested verylow intrinsiccapacitances gatecharge minimized description this power mosfet is designed using the companysconsolidatedstrip layoutbasedmesh. The infineon technologies component described in this data sheet may be used in. If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Spa06n80c3 infineon technologies, spa06n80c3 datasheet. Operating junction temperature 150 oc pulse width limitedby safe operating area 1isd. Jun 07, 2016 07n60c3 datasheet vds650v, power transistor infineon, spp07n60c3, spi07n60c3 datasheet, 07n60c3 pdf, 07n60c3 pinout, 07n60c3 manual, 07n60c3 schematic. Computer diode switching 1n4450, 1n4451, 1n4453 features a. Russian 6p3s, 6p3se 6n3c, 6n3ce general tetrode, used in output stages of low frequency amplifiers. Ipp60r099cp transistor datasheet pdf power transistor. Gt30j126 toshiba insulated gate bipolar transistor silicon n channel igbt gt30j126 high power switching applications unit. Parameter input power w forward current ma reverse. Mosfet nch 800v 6a to220fp online from elcodis, view and download spa06n80c3 pdf datasheet, mosfets, ganfets single specifications. This data sheet may be revised by subsequent versions 2004 eon silicon solution, inc.

Junction, storage temperature tj, t stg 150, 55150 c electrical characteristics ta 25 c unless otherwise specified parameter symbol min. Toshiba field effect transistor silicon n channel mos type. Input power and forward current are the values when the led is used within the range of the derating curve in this data sheet. Features low saturation voltage excellent power dissipation excellent safe operating area. B c3d03060fsilicon carbide schottky diode zrec rectifier fullpak features 600volt schottky rectifier optimized for pfc boost diode application zero reverse recovery current zero forward recovery voltage highfrequency operation temperatureindependent. Spw11n80c3 mosfet nch 800v 11a to247 infineon technologies datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Mosiii 2sk2700 chopper regulator, dcdc converter and motor drive. Absolute maximum ratings, at 25 ac 1n4450 1n4451 1n4453 peak. En25f80 8 megabit serial flash memory with 4kbytes. Source absolute maximum ratings ta 25c item symbol ratings unit drain to source voltage vdss 300 v gate to.

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